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    SGM820PB8B3TFM
    820A, 750V IGBT MODULE

          SGM820PB8B3TFM is a six-cell topology module based on Silan self-developed high-density trench process IGBT chip technology. This module is suitable for hybrid and pure electric vehicle applications, it features high current density, high short-circuit capability and high blocking voltage level, it provides more reliable guarantee for inverter operation under harsh environmental conditions.

    Main feature

    • Based on fine trench FS-V technology, blocking voltage up to 750V

    • Low VCE(sat) with positive temperature coefficient

    • Low switching loss

    • Low Qg and Cres

    • Using DBC with excellent thermal conductivity

    • Built-in NTC for each phase

    • Direct water-cooled substrate, low thermal resistance


    Ordering Information
    Product Name Package form Marking Hazardous Substance Control Packing Type Remarks
    SGM820PB8B3TFM B3 SGM820PB8B3TFM Carton
    Block Diagram

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    Documents
    title Types of Size (KB) date Download the latest English version
    SGM820PB8B3TFM 0 1970-01-01 SGM820PB8B3TFM Brief Datasheet
    Packages
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